• 1.0
• NY N302098
• Dec 14, 2018

• Type: Classification • HTSUS: 8542.39.0001
  

The tariff classification of a semi-conductor wafer from Taiwan

• 1.0
• NY 957293
• Feb 01, 1995

• Type: Classification • HTSUS: 3818.00.0010
  

Carbon Doped Gallium Arsenide Wafers

• 1.0
• NY 889523
• Aug 24, 1993

• Type: Classification • HTSUS: 2804.69.1000
  

The tariff classification of silicon metal, 99% pure fromEngland.

• 1.0
• HQ 950615
• Jan 22, 1992

• Type: Classification • HTSUS: 3206.50.000
  

Classification of electronically doped zinc sulfides, products of Japan, under the Harmonized Tariff Schedule of the United States (HTSUS).

• 1.0
• HQ 953265
• May 14, 1993

• Type: Classification • HTSUS: 3818.00.00
   Related:   088495   

Protest No. 3196-91-100019; Showa Denko America; GAP-EPI-R Type Unmounted Light Emitting Diode Chips; LED; Wafer; Chip; Chemical Element Doped For Use In Electronics; 3818.00.00; 8541.40.20; 8541.40.60

• 1.0
• NY 880773
• Dec 10, 1992

• Type: Classification • HTSUS: 3818.00.0090
  

The tariff classification of unpolished silicon wafers from China

• 1.0
• HQ 957293
• Feb 01, 1995

• Type: Classification • HTSUS: 3818.00.0010
  

Carbon Doped Gallium Arsenide Wafers

• 1.0
• NY N332099
• Apr 28, 2023

• Type: Classification • HTSUS: 3818.00.0090; 9903.90.08
  

The tariff classification of Doped Chemical Compounds from Russia

• 1.0
• HQ 960556
• Feb 13, 1998

• Type: Classification • HTSUS: 3823.90.39
   Related:   950697   

Protest 2704-95-102693; Electronically activated doped zinc sulfides

• 1.0
• NY 836027
• Jan 31, 1989

• Type: Classification • HTSUS: 3818.00.0000
  

The tariff classification of mercury-cadmium-telluridewafers from France